Title :
40 Gbit/s digital IC fabricated using InP/GaAsSb/InP DHBT technology
Author :
Konczykowska, A. ; Riet, M. ; Berdaguer, P. ; Bove, P. ; Kahn, M. ; Godin, J.
Author_Institution :
Agere Technol., Orlando, FL, USA
Keywords :
III-V semiconductors; bipolar digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; 40 Gbit/s; DHBT technology; InP-GaAsSb-InP; digital IC; double-heterojunction bipolar transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051546
