An ultra-high-speed ECL-BiCMOS technology with silicon fillet self-aligned contacts

Author

Liu, Teyin M. ; Chin, Gen M. ; Jeon, Duk Y. ; Morris, Mark D. ; Archer, Vance D., III ; Johnson, Robert W. ; Tarsia, Maurice ; Kim, Helen H. ; Cerullo, Marcio ; Lee, Kwing F. ; Sung, Janmye James ; Lau, Kei-Shun ; Chiu, Tzu-Yin ; Voshchenkov, Alexander M.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

41

Issue

9

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

1546

Lastpage

1555

Abstract

We have developed a half-micron super self-aligned BiCMOS technology for high speed application. A new SIlicon Fillet self-aligned conTact (SIFT) process is integrated in this BiCMOS technology enabling high speed performances for both CMOS and ECL bipolar circuits. In this paper, we describe the process design, device characteristics and circuit performance of this BiCMOS technology. The minimum CMOS gate delay is 38 ps on 0.5 μm gate and 50 ps on 0.6 μm gate ring oscillators at 5 V. Bipolar ECL gate delay is 24 ps on 0.6 μm emitter ring oscillators with collector current density of 40 kA/cm². A single phase decision circuit operating error free over 8 Gb/s and a static frequency divider operating at 13.5 GHz is demonstrated in our BiCMOS technology

Keywords

BiCMOS integrated circuits; VLSI; digital integrated circuits; emitter-coupled logic; frequency dividers; integrated circuit technology; integrated logic circuits; metallisation; silicon; 0.5 micron; 0.6 micron; 13.5 GHz; 24 to 50 ps; 5 V; 8 Gbit/s; CMOS gate delay; ECL bipolar circuits; ECL gate delay; ECL-BiCMOS technology; SIFT process; Si; Si fillet self-aligned contacts; half-micron technology; single phase decision circuit; static frequency divider; super self-aligned technology; ultra-high-speed operation; BiCMOS integrated circuits; CMOS process; CMOS technology; Circuit optimization; Current density; Delay; Integrated circuit technology; Process design; Ring oscillators; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.310106

Filename

310106