Title :
Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer
Author :
Vasylyev, A. ; Weger, P. ; Bakalski, W. ; Simbürger, W.
Author_Institution :
Chair of Circuit Design, Brandenburg Univ. of Technol. Cottbus, Germany
Keywords :
Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; integrated circuit design; power combiners; 1.5 to 2.9 GHz; 28 GHz; 3.5 V; SiGe; bipolar power amplifier; bipolar technology; power combining transformer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20051740
