1141338

Wideband balanced AiGaN/GaN HEMT MMIC low noise amplifier

Seo, S. ; Pavlidis, D. ; Moon, J.S.

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

41

16

2005

37

38

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar waveguide components; differential amplifiers; field effect MMIC; gallium compounds; silicon compounds; waveguide couplers; wide band gap semiconductors; wideband amplifiers; 20 dB; 3 to 16 GHz; 4 dB; AlGaN-GaN; HEMT MMIC amplifier; LNA; SiC; balanced configuration; coplanar waveguide Lange coupler; high electron mobility transistor; low noise amplifier; silicon carbide substrate; wideband amplifier;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:20051461

1497213