DocumentCode
1141338
Title
Wideband balanced AiGaN/GaN HEMT MMIC low noise amplifier
Author
Seo, S. ; Pavlidis, D. ; Moon, J.S.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume
41
Issue
16
fYear
2005
Firstpage
37
Lastpage
38
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar waveguide components; differential amplifiers; field effect MMIC; gallium compounds; silicon compounds; waveguide couplers; wide band gap semiconductors; wideband amplifiers; 20 dB; 3 to 16 GHz; 4 dB; AlGaN-GaN; HEMT MMIC amplifier; LNA; SiC; balanced configuration; coplanar waveguide Lange coupler; high electron mobility transistor; low noise amplifier; silicon carbide substrate; wideband amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20051461
Filename
1497213
Link To Document