Title :
Furnace grown gate oxynitride using nitric oxide (NO)
Author :
Okada, Yoshio ; Tobin, Philip J. ; Reid, Kimberly G. ; Hegde, Rama I. ; Maiti, Bikas ; Ajuria, Sergio A.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fDate :
9/1/1994 12:00:00 AM
Abstract :
Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO2 interface. Much lower thermal budget is required for an NO process than for an N2O process to produce an oxynitride with useful properties. Submicron MOSFET´s with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N2O oxynitride
Keywords :
annealing; insulated gate field effect transistors; nitridation; semiconductor technology; semiconductor-insulator boundaries; silicon compounds; NO; NO process; Si-SiO2; SiNO; current drive characteristics; furnace grown gate oxynitride; hot carrier immunity; submicron MOSFET; thermal budget reduction; Annealing; CMOS process; Capacitors; Design for quality; Dielectric devices; Dielectric substrates; Furnaces; Hot carriers; Nitrogen; Research and development;
Journal_Title :
Electron Devices, IEEE Transactions on
