• DocumentCode
    1141389
  • Title

    Furnace grown gate oxynitride using nitric oxide (NO)

  • Author

    Okada, Yoshio ; Tobin, Philip J. ; Reid, Kimberly G. ; Hegde, Rama I. ; Maiti, Bikas ; Ajuria, Sergio A.

  • Author_Institution
    Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
  • Volume
    41
  • Issue
    9
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1608
  • Lastpage
    1613
  • Abstract
    Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO2 interface. Much lower thermal budget is required for an NO process than for an N2O process to produce an oxynitride with useful properties. Submicron MOSFET´s with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N2O oxynitride
  • Keywords
    annealing; insulated gate field effect transistors; nitridation; semiconductor technology; semiconductor-insulator boundaries; silicon compounds; NO; NO process; Si-SiO2; SiNO; current drive characteristics; furnace grown gate oxynitride; hot carrier immunity; submicron MOSFET; thermal budget reduction; Annealing; CMOS process; Capacitors; Design for quality; Dielectric devices; Dielectric substrates; Furnaces; Hot carriers; Nitrogen; Research and development;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.310113
  • Filename
    310113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1141389