Title :
Amorphous-silicon distributed-threshold voltage transistors with self-aligned poly-silicon sources and drains
Author :
Kim, Chang-Dong ; Matsumura, Masakiyo
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
9/1/1994 12:00:00 AM
Abstract :
A microstructure has been introduced into the channel of amorphous-silicon thin-film transistors with poly-silicon sources and drains. A slant-photolithography method was introduced for fabricating this device without additional photomasks. The off-characteristics have been improved without sacrificing originally good on-characteristics. Temperature dependence is also discussed for the transistor characteristics
Keywords :
amorphous semiconductors; elemental semiconductors; photolithography; semiconductor technology; silicon; thin film transistors; Si; amorphous silicon; distributed-threshold voltage transistors; off-characteristics; on-characteristics; self-aligned polysilicon drains; self-aligned polysilicon sources; slant-photolithography method; temperature dependence; thin-film transistors; Digital TV; Electrodes; Glass; Insulation; Microstructure; Resists; Substrates; Temperature dependence; Thin film transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
