DocumentCode
1141399
Title
Amorphous-silicon distributed-threshold voltage transistors with self-aligned poly-silicon sources and drains
Author
Kim, Chang-Dong ; Matsumura, Masakiyo
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume
41
Issue
9
fYear
1994
fDate
9/1/1994 12:00:00 AM
Firstpage
1614
Lastpage
1617
Abstract
A microstructure has been introduced into the channel of amorphous-silicon thin-film transistors with poly-silicon sources and drains. A slant-photolithography method was introduced for fabricating this device without additional photomasks. The off-characteristics have been improved without sacrificing originally good on-characteristics. Temperature dependence is also discussed for the transistor characteristics
Keywords
amorphous semiconductors; elemental semiconductors; photolithography; semiconductor technology; silicon; thin film transistors; Si; amorphous silicon; distributed-threshold voltage transistors; off-characteristics; on-characteristics; self-aligned polysilicon drains; self-aligned polysilicon sources; slant-photolithography method; temperature dependence; thin-film transistors; Digital TV; Electrodes; Glass; Insulation; Microstructure; Resists; Substrates; Temperature dependence; Thin film transistors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.310114
Filename
310114
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