Title :
Modeling of oxide-charge generation during hot-carrier degradation of PMOSFET´s
Author :
Woltjer, Reinout ; Paulzen, Ger M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fDate :
9/1/1994 12:00:00 AM
Abstract :
Oxide-charge generation determines the lifetime for hot-carrier degradation of PMOSFET´s. We present a model for the generation of oxide charge and its influences on transistor characteristics. Our model explains the logarithmic time dependence for the generation of oxide charge that is observed systematically for many PMOSFET types. This model is in accordance with an empirical prediction method for PMOSFET degradation that has been published earlier. Furthermore, a relation between the injected charge and the amount of degradation is presented. The paper ends with some applications
Keywords :
carrier lifetime; hot carriers; insulated gate field effect transistors; semiconductor device models; PMOSFET degradation; carrier lifetime; hot-carrier degradation; logarithmic time dependence; model; oxide-charge generation; p-channel MOSFET; transistor characteristics; Character generation; Degradation; Electron traps; Hot carriers; Interface states; Low voltage; MOSFET circuits; Prediction methods; Predictive models; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
