• DocumentCode
    1141449
  • Title

    Impact ionisation in strained SiGe pMOSFETs

  • Author

    Nicholas, G. ; Dobbie, A. ; Grasby, T.J. ; Whall, T.E. ; Parker, E.H.C.

  • Author_Institution
    Dept. of Phys., Univ. of Warwick, Coventry, UK
  • Volume
    41
  • Issue
    16
  • fYear
    2005
  • Firstpage
    59
  • Lastpage
    60
  • Keywords
    Ge-Si alloys; MOSFET; hole mobility; impact ionisation; semiconductor device measurement; Si0.64Ge0.36; band splitting; compressively strained pMOSFET; hole mobility; impact ionisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20052074
  • Filename
    1497224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1141449