1141461

Thermal stability of mo-based schottky contact for AiGaN/GaN HEMT

Sozza, A. ; Dua, C. ; Morvan, E. ; Grimbert, B. ; Forte-Poisson, M. A di ; Delage, S.L. ; Zanoni, E.

Dept. of Inf. Eng., Univ. degli studi di Padova, Italy

41

16

2005

61

62

III-V semiconductors; Schottky barriers; ageing; aluminium compounds; gallium compounds; gold; high electron mobility transistors; metallisation; molybdenum; semiconductor device reliability; thermal stability; wide band gap semiconductors; 2000 h; HEMT; Mo-Au-AlGaN-GaN; Mo/Au gate; Schottky contact; ageing test; reliability; thermal stability; thermal storage test;

English

Electronics Letters

iet

0013-5194

jour

10.1049/el:20051475

1497225