• DocumentCode
    1141461
  • Title

    Thermal stability of mo-based schottky contact for AiGaN/GaN HEMT

  • Author

    Sozza, A. ; Dua, C. ; Morvan, E. ; Grimbert, B. ; Forte-Poisson, M. A di ; Delage, S.L. ; Zanoni, E.

  • Author_Institution
    Dept. of Inf. Eng., Univ. degli studi di Padova, Italy
  • Volume
    41
  • Issue
    16
  • fYear
    2005
  • Firstpage
    61
  • Lastpage
    62
  • Keywords
    III-V semiconductors; Schottky barriers; ageing; aluminium compounds; gallium compounds; gold; high electron mobility transistors; metallisation; molybdenum; semiconductor device reliability; thermal stability; wide band gap semiconductors; 2000 h; HEMT; Mo-Au-AlGaN-GaN; Mo/Au gate; Schottky contact; ageing test; reliability; thermal stability; thermal storage test;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051475
  • Filename
    1497225
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1141461