Correlation between substrate hot electron energy and homogeneous degradation in n-MOSFET´s

Experimental data of substrate hot-electron induced degradation in n-MOSFET´s is analyzed by means of a simulation tool that uses an efficient nonlocal algorithm to calculate the electron energy distribution at the Si-SiO₂ interface. Comparison between the bias dependence of the damage due to small injected charges and that of the hot-carrier energy distribution suggests that electrons with energy below the Si-SiO₂ barrier play a dominant role in the early stages of device degradation