Correlation between substrate hot electron energy and homogeneous degradation in n-MOSFET´s

Author

Selmi, Luca ; Fiegna, Claudio ; Bez, Roberto

Author_Institution

Dipartimento di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy

Volume

Issue

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

1677

Lastpage

1679

Abstract

Experimental data of substrate hot-electron induced degradation in n-MOSFET´s is analyzed by means of a simulation tool that uses an efficient nonlocal algorithm to calculate the electron energy distribution at the Si-SiO₂ interface. Comparison between the bias dependence of the damage due to small injected charges and that of the hot-carrier energy distribution suggests that electrons with energy below the Si-SiO₂ barrier play a dominant role in the early stages of device degradation

Keywords

hot carriers; insulated gate field effect transistors; semiconductor device models; Si-SiO₂; Si-SiO₂ interface; damage; homogeneous degradation; injected charges; n-MOSFETs; nonlocal algorithm; simulation tool; substrate hot electron energy distribution; Algorithm design and analysis; Analytical models; Degradation; Doping profiles; Hot carriers; Interface states; MOS devices; MOSFET circuits; Semiconductor process modeling; Substrate hot electron injection;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.310126

Filename

310126

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1141532