Title : 
Tm-Doped Fiber Lasers: Fundamentals and Power Scaling
         
        
            Author : 
Moulton, Peter F. ; Rines, Glen A. ; Slobodtchikov, Evgueni V. ; Wall, Kevin F. ; Frith, Gavin ; Samson, Bryce ; Carter, Adrian L G
         
        
            Author_Institution : 
Q-Peak Inc., Bedford, MA
         
        
        
        
        
        
        
            Abstract : 
We describe fundamental measurements of the properties of thulium (Tm)-doped silica and power scaling studies of fiber lasers based on the material. Data on the high-lying Tm:silica energy levels, the first taken to our knowledge, indicate that pumping at 790 nm is unlikely to lead to fiber darkening via multiphoton excitation. Measurement of the cross-relaxation dynamics produces an estimate that, at the doping levels used, as much as 80% of the decay of the Tm level pumped is due to cross relaxation. Using a fiber having a 25-mum-diameter, 0.08 numerical aperture (NA) core, we observed fiber laser efficiencies as high as 64.5% and output powers of 300 W (around 2040 nm) for 500 W of launched pump power, with a nearly diffraction-limited beam. At these efficiencies, the cross-relaxation process was producing 1.8 laser photons per pump photon. We generated 885 W from a multimode laser using a 35-mum, 0.2-NA core fiber and set a new record for Tm-doped fiber laser continuous-wave power.
         
        
            Keywords : 
fibre lasers; silicon compounds; thulium; SiO2:Tm; Tm-doped fiber laser; cross-relaxation dynamics; high-lying Tm:silica energy levels; multimode laser; nearly diffraction-limited beam; power 885 W; power scaling; Doping; Energy states; Fiber lasers; Laser excitation; Optical materials; Power generation; Power lasers; Power measurement; Pump lasers; Silicon compounds; Fiber lasers; spectroscopy; thulium (Tm) doping;
         
        
        
            Journal_Title : 
Selected Topics in Quantum Electronics, IEEE Journal of
         
        
        
        
        
            DOI : 
10.1109/JSTQE.2008.2010719