Title :
High-performance, 1.55 μm AlGaAsSb/AlGaSb pin photodetectors
Author :
Lohokare, S.K. ; Sulima, O.V. ; Solov´ev, V.A. ; Ivanov, S.V. ; Prather, D.W.
Author_Institution :
Dept. of Electr. and Comput. Eng., Univ. of Delaware, Newark, DE, USA
Abstract :
Results obtained from the fabrication and characterisation of double heterostructure AlGaAsSb/AlGaSb pin photodetectors designed for 1.55 μm wavelength are reported. The photodetectors were fabricated using a customised inductively coupled plasma etching process, and exhibited high external quantum efficiency and record speed characteristics (3 dB bandwidth of 10 GHz).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; p-i-n photodiodes; photodetectors; sputter etching; 1.55 micron; 10 GHz; AlGaAsSb-AlGaSb; double heterostructure p-i-n photodetectors; external quantum efficiency; inductively coupled plasma etching process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20046148
