DocumentCode
1141682
Title
Active SAW devices on 2DEG heterostructures
Author
Calle, F. ; Grajal, J. ; Pedros, J.
Author_Institution
Inst. de Sistemas Optoelectronicos y Microtecnologia, Univ. Politecnica de Madrid, Spain
Volume
40
Issue
21
fYear
2004
Firstpage
1384
Lastpage
1386
Abstract
Active surface acoustic wave filters with voltage-controlled insertion losses have been achieved using AlGaN/GaN 2DEG heterostuctures as piezoelectric substrates. Transfer control is performed by moderate DC voltages between the fingers in either or both input and output interdigital transducers. These filters can be integrated into future MMIC circuits based on AlGaN/GaN high electron mobility transistors.
Keywords
III-V semiconductors; active filters; gallium compounds; interdigital transducers; molecular beam epitaxial growth; surface acoustic wave filters; two-dimensional electron gas; wide band gap semiconductors; 2DEG heterostructures; AIGaN-GaN high electron mobility transistors; Al2O3; AlGaN-GaN; AlGaN-GaN 2DEG heterostuctures; MMIC circuits; active SAW devices; active surface acoustic wave filters; interdigital transducers; molecular beam epitaxial growth; piezoelectric substrates; transfer control; voltage controlled insertion losses;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20046321
Filename
1344916
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