• DocumentCode
    1141735
  • Title

    Comparison of quantized Hall resistances RH(2) and RH(4) of a GaAs/AlGaAs heterostructure device

  • Author

    Nagashima, N. ; Date, M. ; Wakabayashi, J. ; Kawaji, S. ; Yoshihiro, K. ; Kinoshita, J. ; Inagaki, K. ; Yamanouchi, C.

  • Author_Institution
    Gakushuin Univ., Tokyo, Japan
  • Volume
    43
  • Issue
    4
  • fYear
    1994
  • fDate
    8/1/1994 12:00:00 AM
  • Firstpage
    521
  • Lastpage
    525
  • Abstract
    Quantized Hall resistances RH(4) and RH(2) of a GaAs/AlGaAs heterostructure were compared with reference resistors whose values are close to h/4e2 or h/2e2. The values of the reference resistors were compared with a 100 ohm standard resistor via a cryogenic current comparator (CCC) resistance bridge. Results showed that (4×RH(4)-2×RH(2))/2×RH (2)=(0.037±0.019)×10-6
  • Keywords
    III-V semiconductors; aluminium compounds; comparators (circuits); electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; semiconductor junctions; GaAs-AlGaAs; GaAs/AlGaAs heterostructure device; cryogenic current comparator; quantized hall resistances; reference resistors; resistance bridge; Current measurement; Electric resistance; Gallium arsenide; Humidity measurement; Magnetic field measurement; Pressure measurement; Resistors; Rotation measurement; Switches; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/19.310161
  • Filename
    310161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1141735