Title :
Smart-power devices seek wiser CAE tools
Author :
Williams, Richard K. ; Amberiadis, Kostas ; Angst, David
Author_Institution :
Siliconix, Santa Clara, CA, USA
fDate :
7/1/1991 12:00:00 AM
Abstract :
The difficulties in developing generalized computer design tools for smart-power semiconductor electronics, a highly specialized field requiring a mix of analog and digital integrated-circuit design, unique semiconductor-device-fabrication technology, and knowledge of application-specific power systems, are examined. These include the problem of dealing with the double-diffused MOS (DMOS) transistor, as well as the simulation of trench refill processes, 2D oxidation phenomena and their stress-induced effects on avalanche breakdown, and the 3D diffusion of the spherical junctions encountered in high-voltage termination. The complexities associated with 2D simulations are discussed in some detail. Dealing with asymmetric devices and with structures consisting of circles, arcs, and 45 degrees angles is also considered.<>
Keywords :
circuit CAD; digital simulation; power electronics; power integrated circuits; power transistors; 2D oxidation phenomena; 2D simulations; 3D diffusion; CAD; CAE tools; DMOS; application-specific power systems; asymmetric devices; avalanche breakdown; computer design tools; double-diffused MOS; high-voltage termination; mixed digital/analogue IC design; smart-power semiconductor electronics; spherical junctions; stress-induced effects; trench refill processes; Circuit simulation; Computational modeling; Computer aided engineering; Computer simulation; Consumer electronics; Integrated circuit technology; MOSFETs; Power engineering computing; Power integrated circuits; Power system simulation;
Journal_Title :
Circuits and Devices Magazine, IEEE
