Title :
GaAsFET and HEMT small-signal parameter extraction from measured S-parameters
Author_Institution :
Dept. of Electr. Eng., Alabama Univ., Tuscaloosa, AL, USA
fDate :
8/1/1994 12:00:00 AM
Abstract :
An improved method for extracting small-signal model parameters including package parasitics for GaAsFET and HEMT devices is described. Monte Carlo simulation techniques result in optimized model component values for minimum error between measured and modeled S-parameters. Simulation time is reduced by starting from initial component values derived from an improved direct extraction procedure
Keywords :
Monte Carlo methods; S-parameters; circuit analysis computing; digital simulation; electronic engineering computing; field effect transistors; gallium arsenide; high electron mobility transistors; semiconductor device models; FET; GaAs; HEMT; Monte Carlo simulation; bond wire inductances; direct extraction; measured S-parameters; minimum error; modeled S-parameters; optimized model; package parasitics; simulation time; small-signal parameter extraction; Bonding; Electrical resistance measurement; HEMTs; Microwave frequencies; Microwave transistors; Packaging; Parameter extraction; Parasitic capacitance; Scattering parameters; Transconductance;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
