• DocumentCode
    1142127
  • Title

    Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

  • Author

    Demiguel, Stéphane ; Giraudet, Louis ; Joulaud, L. ; Decobert, Jean ; Blache, F. ; Coupé, V. ; Jorge, F. ; Pagnod-Rossiaux, P. ; Boucherez, E. ; Achouche, M. ; Devaux, F.

  • Author_Institution
    Alcatel Opto+ Labs., Marcoussis, France
  • Volume
    20
  • Issue
    12
  • fYear
    2002
  • fDate
    12/1/2002 12:00:00 AM
  • Firstpage
    2004
  • Lastpage
    2014
  • Abstract
    The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-μm fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (±1.6 μm and ±2 μm, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.
  • Keywords
    infrared detectors; optical design techniques; optical receivers; p-i-n photodiodes; photodetectors; semiconductor device packaging; 0.8 V; 11 mA; 40 GHz; 40 Gbit/s; 40-Gb/s applications; classical p-i-n photodiode; cleaved fiber; compatibility; cost-effective packaging techniques; coupling efficiency; decision circuit; design; double-stage taper; evanescently coupled photodiodes; fabrication; fiber mode diameter; high efficiency; high optical power handling capability; high output voltage; integration; large fiber mode diameter; low-cost module fabrication; mode size converters; optical power handling; optical power handling capabilities; performance; photoreceiver modules; relaxed alignment tolerances; responsivity; saturation current; side-illuminated photodiodes; transverse-electric/transverse-magnetic polarization dependence; ultrawide band; wide bandwidth; Bandwidth; Optical device fabrication; Optical devices; Optical fiber devices; Optical fiber polarization; Optical saturation; Optical surface waves; Packaging; Photodiodes; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2002.806752
  • Filename
    1178132