Title :
40-Gb/s X-cut LiNbO3 optical modulator with two-step back-slot structure
Author :
Kondo, Jungo ; Kondo, Atsuo ; Aoki, Kenji ; Imaeda, Minoru ; Mori, Tsutomu ; Mizuno, Yukio ; Takatsuji, Saori ; Kozuka, Yoshinari ; Mitomi, Osamu ; Minakata, Makoto
Author_Institution :
NGK Insulators Ltd., Aichi, Japan
fDate :
12/1/2002 12:00:00 AM
Abstract :
We propose a newly designed X-cut lithium niobate (LiNbO3) optical modulator. It has a two-step back-slot structure to satisfy the velocity-matching condition without the buffer layer of silicon dioxide (SiO2). Accordingly, this modulator can achieve low drive voltage and low optical insertion loss. In addition, the dc-drift phenomena due to the buffer layer can be suppressed. This structure is fabricated with micromachining technology using excimer laser ablation. The optical 3-dB bandwidth of the fabricated modulator reaches 30 GHz, and the drive voltage is less than 3 V at 1 kHz. From the measurement of the optical eye diagram at 43.5-Gb/s, clear eye openings were obtained. This modulator is sufficient for 40-Gb/s optical transmission systems.
Keywords :
electro-optical modulation; laser ablation; lithium compounds; micromachining; optical communication equipment; optical fabrication; optical losses; 3 V; 30 GHz; 40 Gbit/s; 40-Gb/s optical transmission systems; 43.5 Gbit/s; Gb/s X-cut LiNbO3 optical modulator; LiNbO3; buffer layer; clear eye openings; dc-drift phenomena; excimer laser ablation; low drive voltage; low optical insertion loss; micromachining technology; optical eye diagram; silicon dioxide; two-step back-slot structure; velocity-matching condition; Buffer layers; Insertion loss; Lithium niobate; Low voltage; Micromachining; Optical buffering; Optical design; Optical losses; Optical modulation; Silicon compounds;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2002.806766
