• DocumentCode
    1142355
  • Title

    Antistatic protection in wafer drying process by spin-drying

  • Author

    Inaba, Hitoshi ; Sakata, Soichiro ; Yoshida, Takanori ; Okada, Takao ; Ohmi, Tadahiro

  • Author_Institution
    Takasago Thermal Eng. Co. Ltd., Atsugi, Japan
  • Volume
    5
  • Issue
    3
  • fYear
    1992
  • fDate
    8/1/1992 12:00:00 AM
  • Firstpage
    234
  • Lastpage
    240
  • Abstract
    As part of an effort to produce a static-free wafer spin-dryer the authors developed an ionizer for use with spin-dryers and evaluated its charge removing and particle rejecting effects. Particle generation due to sputtering of the discharge electrodes themselves was prevented. The protection of the discharge electrodes with quartz glass completely prevents particle generation by ion and electron sputters, and the concentration of ozone generated is reduced to less than 1/10 of the usual level. This ionizer is excellent in its charge-removing performance taking only about 1 s to reduce the wafer potential from ±5 kV to ±0.1 kV. The residual potential due to the imbalance of ion polarity is extremely low, only 10 V at the maximum. The ionizer´s charge removing effect to prevent particle deposition was also evaluated, and almost complete success is reported in preventing the statically induced deposition of particles to wafers while they are being dried by a spin-dryer
  • Keywords
    drying; electrostatics; integrated circuit manufacture; protection; semiconductor technology; antistatic protection; charge removing effects; discharge electrode protection; ion polarity imbalance; ionizer; particle generation; particle rejecting effects; quartz glass; residual potential; spin-drying; wafer drying process; wave potential reduction; Electrodes; Impedance; Impurities; Infrared spectra; Inorganic materials; Manufacturing processes; Protection; Semiconductor device manufacture; Sputtering; Surface discharges;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.149814
  • Filename
    149814