DocumentCode
1142355
Title
Antistatic protection in wafer drying process by spin-drying
Author
Inaba, Hitoshi ; Sakata, Soichiro ; Yoshida, Takanori ; Okada, Takao ; Ohmi, Tadahiro
Author_Institution
Takasago Thermal Eng. Co. Ltd., Atsugi, Japan
Volume
5
Issue
3
fYear
1992
fDate
8/1/1992 12:00:00 AM
Firstpage
234
Lastpage
240
Abstract
As part of an effort to produce a static-free wafer spin-dryer the authors developed an ionizer for use with spin-dryers and evaluated its charge removing and particle rejecting effects. Particle generation due to sputtering of the discharge electrodes themselves was prevented. The protection of the discharge electrodes with quartz glass completely prevents particle generation by ion and electron sputters, and the concentration of ozone generated is reduced to less than 1/10 of the usual level. This ionizer is excellent in its charge-removing performance taking only about 1 s to reduce the wafer potential from ±5 kV to ±0.1 kV. The residual potential due to the imbalance of ion polarity is extremely low, only 10 V at the maximum. The ionizer´s charge removing effect to prevent particle deposition was also evaluated, and almost complete success is reported in preventing the statically induced deposition of particles to wafers while they are being dried by a spin-dryer
Keywords
drying; electrostatics; integrated circuit manufacture; protection; semiconductor technology; antistatic protection; charge removing effects; discharge electrode protection; ion polarity imbalance; ionizer; particle generation; particle rejecting effects; quartz glass; residual potential; spin-drying; wafer drying process; wave potential reduction; Electrodes; Impedance; Impurities; Infrared spectra; Inorganic materials; Manufacturing processes; Protection; Semiconductor device manufacture; Sputtering; Surface discharges;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/66.149814
Filename
149814
Link To Document