DocumentCode :
1142355
Title :
Antistatic protection in wafer drying process by spin-drying
Author :
Inaba, Hitoshi ; Sakata, Soichiro ; Yoshida, Takanori ; Okada, Takao ; Ohmi, Tadahiro
Author_Institution :
Takasago Thermal Eng. Co. Ltd., Atsugi, Japan
Volume :
5
Issue :
3
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
234
Lastpage :
240
Abstract :
As part of an effort to produce a static-free wafer spin-dryer the authors developed an ionizer for use with spin-dryers and evaluated its charge removing and particle rejecting effects. Particle generation due to sputtering of the discharge electrodes themselves was prevented. The protection of the discharge electrodes with quartz glass completely prevents particle generation by ion and electron sputters, and the concentration of ozone generated is reduced to less than 1/10 of the usual level. This ionizer is excellent in its charge-removing performance taking only about 1 s to reduce the wafer potential from ±5 kV to ±0.1 kV. The residual potential due to the imbalance of ion polarity is extremely low, only 10 V at the maximum. The ionizer´s charge removing effect to prevent particle deposition was also evaluated, and almost complete success is reported in preventing the statically induced deposition of particles to wafers while they are being dried by a spin-dryer
Keywords :
drying; electrostatics; integrated circuit manufacture; protection; semiconductor technology; antistatic protection; charge removing effects; discharge electrode protection; ion polarity imbalance; ionizer; particle generation; particle rejecting effects; quartz glass; residual potential; spin-drying; wafer drying process; wave potential reduction; Electrodes; Impedance; Impurities; Infrared spectra; Inorganic materials; Manufacturing processes; Protection; Semiconductor device manufacture; Sputtering; Surface discharges;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.149814
Filename :
149814
Link To Document :
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