DocumentCode
11425
Title
Effect of SiO2 doping on the dielectric, ferroelectric and piezoelectric properties of (Ba0.7Ca0.3)(Zr0.2Ti0.8)O3 ceramics with different sintering temperatures
Author
Wenfeng Liu ; Shengtao Li
Author_Institution
State Key Lab. of Electr. Insulation & Power Equip., Xi´an Jiaotong Univ., Xi´an, China
Volume
22
Issue
2
fYear
2015
fDate
Apr-15
Firstpage
734
Lastpage
738
Abstract
In the present study, the doping effect of SiO2 on the dielectric, ferroelectric and piezoelectric properties of the (Ba0.7Ca0.3)(Zr0.2Ti0.8)O3 (abbreviated as BZT-50BCT hereafter) ceramics sintered at different temperatures were systematically studied. With the SiO2 dopant, the distribution of the grain size became more homogeneous. Besides, the average grain sizes firstly increased with increasing the SiO2 concentrations and then decreased. As the macroscopic properties, the dielectric constant decreased with the addition of SiO2. The remnant polarization Pr firstly increased and then decreased with increasing the SiO2 concentration. While the coercive field monotonically decreased with the SiO2 dopant. And the piezoelectric constant d33 firstly enhanced by the SiO2 and then reduced as further increasing the SiO2 concentrations. The maximum d33 of 500 pC/N has been obtained in the 0.5 mol% SiO2 doped BZT-50BCT ceramics sintered at 1500° from the industry available raw materials.
Keywords
barium compounds; calcium compounds; ferroelectric ceramics; grain size; permittivity; piezoceramics; silicon compounds; sintering; (Ba0.7Ca0.3)(Zr0.2Ti0.8)O3:SiO2; BZT-50BCT ceramics sintering; dielectric constant; dielectric properties; ferroelectric properties; grain size distribution; macroscopic properties; piezoelectric constant; piezoelectric properties; temperature 1500 degC; Ceramics; Dielectrics; Doping; Grain size; Lead; Temperature; Temperature measurement; Dielectric materials; ferroelectric materials; piezoelectric materials;
fLanguage
English
Journal_Title
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
1070-9878
Type
jour
DOI
10.1109/TDEI.2015.7076769
Filename
7076769
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