DocumentCode
1142513
Title
A Novel Biasing Technique for Addressable Parametric Arrays
Author
Smith, Brad ; Arriordaz, Alexandre ; Kolagunta, Venkat ; Schmidt, Jeff ; Shroff, Mehul
Author_Institution
Freescale Semicond., Austin, TX
Volume
22
Issue
1
fYear
2009
Firstpage
134
Lastpage
145
Abstract
Addressable arrays that use switches to isolate the devices being tested are limited in size and utility by the parasitic leakage caused by those switches. A new biasing technique that reduces the leakage of these switches has been studied to address this problem. Simulations performed in a 90 nm low-power technology predicted almost a two-decade drop in parasitic leakage of the array. Experimental data confirmed this improvement. 1 times 32 and 4 times 32 arrays using this biasing technique were used to investigate probe pad effects, device variability and geometry dependence.
Keywords
CMOS integrated circuits; field effect transistor switches; 1 times 32 arrays; 4 times 32 arrays; CMOS pass gates; MOSFET; addressable parametric arrays; biasing technique; parasitic leakage; switches; Active matrix addressing; Current measurement; Geometry; Isolation technology; Joining processes; MOSFETs; Predictive models; Probes; Switches; Testing; MOSFET array; parametric test; probe pads; source biasing; test structure design; variability;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2008.2010745
Filename
4773477
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