• DocumentCode
    1142513
  • Title

    A Novel Biasing Technique for Addressable Parametric Arrays

  • Author

    Smith, Brad ; Arriordaz, Alexandre ; Kolagunta, Venkat ; Schmidt, Jeff ; Shroff, Mehul

  • Author_Institution
    Freescale Semicond., Austin, TX
  • Volume
    22
  • Issue
    1
  • fYear
    2009
  • Firstpage
    134
  • Lastpage
    145
  • Abstract
    Addressable arrays that use switches to isolate the devices being tested are limited in size and utility by the parasitic leakage caused by those switches. A new biasing technique that reduces the leakage of these switches has been studied to address this problem. Simulations performed in a 90 nm low-power technology predicted almost a two-decade drop in parasitic leakage of the array. Experimental data confirmed this improvement. 1 times 32 and 4 times 32 arrays using this biasing technique were used to investigate probe pad effects, device variability and geometry dependence.
  • Keywords
    CMOS integrated circuits; field effect transistor switches; 1 times 32 arrays; 4 times 32 arrays; CMOS pass gates; MOSFET; addressable parametric arrays; biasing technique; parasitic leakage; switches; Active matrix addressing; Current measurement; Geometry; Isolation technology; Joining processes; MOSFETs; Predictive models; Probes; Switches; Testing; MOSFET array; parametric test; probe pads; source biasing; test structure design; variability;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2008.2010745
  • Filename
    4773477