DocumentCode
1142688
Title
Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 μm BiCMOS technology
Author
Lin, Y.-T. ; Wang, T. ; Lu, S.S.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume
44
Issue
9
fYear
2008
Firstpage
563
Lastpage
564
Abstract
A fully integrated concurrent dual-band low noise amplifier with suspended inductors is reported. Wideband input impedance matching and wideband low noise characteristics are achieved by the proposed capacitive feedback technique simultaneously. Measurement results show input return losses of -12.8 and -11.5 dB, voltage gains of 14.4 and 14.3 dB, and noise figures of 2.5 and 3.0 measured at 2.3 and 4.5 GHz, respectively, with an image rejection ratio of 26.1 dB and power consumption of 11.9 mW.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; inductors; low noise amplifiers; microwave amplifiers; semiconductor materials; wideband amplifiers; BiCMOS technology; capacitive feedback technique; frequency 2.3 GHz to 4.5 GHz; fully integrated concurrent dual-band low noise amplifier; image rejection ratio; inductors; power 11.9 mW; power consumption; wideband input impedance matching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20080575
Filename
4497328
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