Title :
Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 μm BiCMOS technology
Author :
Lin, Y.-T. ; Wang, T. ; Lu, S.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
A fully integrated concurrent dual-band low noise amplifier with suspended inductors is reported. Wideband input impedance matching and wideband low noise characteristics are achieved by the proposed capacitive feedback technique simultaneously. Measurement results show input return losses of -12.8 and -11.5 dB, voltage gains of 14.4 and 14.3 dB, and noise figures of 2.5 and 3.0 measured at 2.3 and 4.5 GHz, respectively, with an image rejection ratio of 26.1 dB and power consumption of 11.9 mW.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; inductors; low noise amplifiers; microwave amplifiers; semiconductor materials; wideband amplifiers; BiCMOS technology; capacitive feedback technique; frequency 2.3 GHz to 4.5 GHz; fully integrated concurrent dual-band low noise amplifier; image rejection ratio; inductors; power 11.9 mW; power consumption; wideband input impedance matching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080575
