Title :
Low-threshold injectorless quantum cascade laser with four material compositions
Author :
Katz, S. ; Boehm, G. ; Amann, M.-C.
Author_Institution :
Walter-Schottky Inst., Techische Univ. Munchen, Garching
Abstract :
A new design for an injectorless quantum cascade laser resulting in a threshold current density of 0.57 kA/cm2 at 300 K and a maximum operation temperature of 360 K is presented. The active zone is realised in the strain compensated material system Al(In)As-(Ga)InAs using AlAs barriers for increasing the T0 and InAs for strain compensation. Additionally the laser performance was improved compared to previous work.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; optical design techniques; optical materials; quantum cascade lasers; AlAs-GaInAs; AlAs-InAs; AlInAs-GaInAs; AlInAs-InAs; active zone; injectorless quantum cascade laser; laser performance; strain compensated material system; temperature 300 K; temperature 360 K; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080613
