Title :
Improved ESD voltage by inserting floating metal ring in GaN-based light emitting diodes
Author :
Hwang, S. ; Shim, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan
Abstract :
Improvement of the electrostatic discharge (ESD) voltage in an InGaN/GaN blue light emitting diode (LED) grown on sapphire substrate is presented by inserting floating metal near the n-electrode. ESD voltages about four times larger than previously observed are experimentally obtained for LEDs with floating metal compared to those without.
Keywords :
III-V semiconductors; electrostatic discharge; gallium compounds; light emitting diodes; sapphire; wide band gap semiconductors; ESD voltage; GaN; LED; floating metal; floating metal ring; light emitting diodes; sapphire substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080217
