• DocumentCode
    1142883
  • Title

    Improved ESD voltage by inserting floating metal ring in GaN-based light emitting diodes

  • Author

    Hwang, S. ; Shim, J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan
  • Volume
    44
  • Issue
    9
  • fYear
    2008
  • Firstpage
    590
  • Lastpage
    590
  • Abstract
    Improvement of the electrostatic discharge (ESD) voltage in an InGaN/GaN blue light emitting diode (LED) grown on sapphire substrate is presented by inserting floating metal near the n-electrode. ESD voltages about four times larger than previously observed are experimentally obtained for LEDs with floating metal compared to those without.
  • Keywords
    III-V semiconductors; electrostatic discharge; gallium compounds; light emitting diodes; sapphire; wide band gap semiconductors; ESD voltage; GaN; LED; floating metal; floating metal ring; light emitting diodes; sapphire substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080217
  • Filename
    4497345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1142883