• DocumentCode
    1143057
  • Title

    Silicon monolithic MM-wave integrated circuit (SIMMWIC) devices mounted up-side-down on a copper heat sink integral with cavity resonator

  • Author

    Presting, Hartmut ; Buechler, Josef ; Kuisl, Max ; Strohm, Karl Matthias ; Luy, AnJohann-Friedrich

  • Author_Institution
    Res. Center, Daimler-Benz AG, Ulm, Germany
  • Volume
    42
  • Issue
    9
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1837
  • Lastpage
    1841
  • Abstract
    Silicon monolithic MM-wave integrated circuits (SIMMWIC) used as oscillators in radar system applications in the 60-80 GHz regime are mounted on a heat sink with integrated resonator. The heat sink consists of a thin carrier plate (aluminum nitride (AlN) or copper (Cu)) and and a gold plated copper block with integrated resonator cavity. The resonator cavity is formed by a rectangular cavity milled in the Cu block, terminated on the top by the gold plated carrier plate on top of which a MM-wave emitting integrated coplanar slot-transmitter is mounted up-side-down. The main part of the emitted RF power is radiated through the substrate-perpendicular to the chip plane-the other part is coupled through a slit on the carrier plate into the resonator cavity leading to a higher spectral purity and a stabilization of the oscillating frequency
  • Keywords
    IMPATT diodes; MMIC; cavity resonators; copper; elemental semiconductors; frequency stability; heat sinks; microwave integrated circuits; microwave oscillators; packaging; radar transmitters; silicon; 60 to 80 GHz; AlN; Au plated Cu block; Au-Cu; Cu heat sink; EHF; IMPATT oscillator; MIMIC; Si; cavity resonator; coplanar slot-transmitter; integrated resonator; monolithic MM-wave IC; oscillating frequency; oscillators; radar system applications; rectangular cavity; stabilization; thin carrier plate; up-side-down mounting; Aluminum nitride; Application specific integrated circuits; Copper; Gold; Heat sinks; Monolithic integrated circuits; Oscillators; Radar applications; Radio frequency; Silicon;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.310596
  • Filename
    310596