A New Isolation Technology for Automotive Power-Integrated-Circuit Applications

Author

Sun, Jingmeng ; Jiang, Frank X C ; Guan, Lingpeng ; Xiong, Zhibin ; Yan, Guizhen ; Sin, Johnny K O

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

56

Issue

9

fYear

2009

Firstpage

2144

Lastpage

2149

Abstract

In this paper, a new bulk silicon isolation structure with wafer-thick trenches is proposed for automotive (42 V) power-integrated-circuit applications. This technology provides the advantages of complete isolation with lower wafer cost and higher thermal-dissipation capability as compared with the silicon-on-insulator technology. Experimental results show that the new isolation structure can provide complete electrical isolation and with a 13% reduction in thermal resistance.

Keywords

cooling; isolation technology; power integrated circuits; silicon; silicon-on-insulator; thermal resistance; wafer-scale integration; Si; automotive power-integrated-circuit applications; bulk silicon isolation structure; electrical isolation; isolation technology; silicon-on-insulator technology; thermal resistance; thermal-dissipation capability; voltage 42 V; wafer-thick trenches; Automotive engineering; Costs; Isolation technology; Power integrated circuits; Power transistors; Protection; Silicon compounds; Silicon on insulator technology; Sun; Thermal resistance; Automotive; VDMOS; heat-dissipation capability; power integrated circuit (PIC); power transistors; trench isolation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2026089

Filename

5170030