DocumentCode :
1143696
Title :
Study of Optoelectronic Sampler Linearity for Analog-to-Digital Conversion of RF Signals
Author :
Delord, Jean-Marie ; Roux, Jean-François ; Coutaz, Jean-Louis ; Breuil, Nicolas
Author_Institution :
IMEP-LAHC, Univ. de Savoie, Le Bourget, France
Volume :
21
Issue :
19
fYear :
2009
Firstpage :
1369
Lastpage :
1371
Abstract :
Photoconductive sampling of 10-GHz radio- frequency (RF) signal is demonstrated using interdigitated photoswitches made from low-temperature grown GaAs. We study the linearity of the device for RF input power ranging from -3 to 20 dBm. For moderate levels, the sampler shows a spurious-free dynamic range (SFDR) better than 40 dB. For the largest values, it exhibits a nonlinear response that deteriorates both SFDR and resolution. This nonlinearity is attributed to drift velocity saturation in the semiconductor material.
Keywords :
III-V semiconductors; analogue-digital conversion; gallium arsenide; optical switches; optoelectronic devices; GaAs; analog-to-digital conversion; drift velocity saturation; frequency 10 GHz; interdigitated photoswitches; low-temperature grown; optoelectronic sampler linearity; photoconductive sampling; radio-frequency signal; Analog–digital conversion; MSM devices; nonlinear distorsion; optoelectronic devices; photoconductive devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2026912
Filename :
5170040
Link To Document :
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