MOS characteristics of substituted Al gate on high-κ dielectric

Author

Park, Chang Seo ; Cho, Byung Jin ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

25

Issue

11

fYear

2004

Firstpage

725

Lastpage

727

Abstract

Substituted aluminum (SA) metal gate on high-κ gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved for a Ti-Al-polysilicon-HfAlON gate structure by a low-temperature annealing at 450°C. The SA gate on HfAlON dielectric shows a very low work function of 4.25eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from the Fermi-level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided metal gate.

Keywords

Fermi level; MIS structures; MOSFET; aluminium; annealing; dielectric materials; hafnium compounds; leakage currents; work function; 4.25 eV; 450 C; Fermi-level pinning problem; HfAlON dielectric; MOS characteristics; Ti-Al-Si-HfAlON; Ti-Al-polysilicon-HfAlON gate; bulk nMOSFET; fully silicided metal gate; high-k gate dielectric; leakage current distribution; low-temperature annealing; polysilicon substitution; substituted Al gate; work function; Aluminum; Annealing; Boron; Dielectrics; Doping; Furnaces; Leakage current; MOSFET circuits; Nanoscale devices; Temperature; Aluminum; CMOS; FUSI; fully silicided; high-$kappa$; metal gate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.837537

Filename

1347208