Title :
In/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As-GaAs strained-layer quantum-well heterostructure circular ring lasers
Author :
Han, H. ; Favaro, M.E. ; Forbes, D.V. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
The growth, processing, and optical characterization of a single Y-junction In/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As-GaAs strained-layer quantum-well heterostructure circular ring laser (6 mu m width, 11 approximately 251 mu m outer radius) are described. The circular ring lasers have been grown by metalorganic chemical vapor deposition, etched by SiCl/sub 4/ reactive ion etching, and planarized by polyimide. The dependences of laser threshold current density and peak emission wavelength (950 approximately 1015 nm) on outer radius are presented. The emission spectra show that the circular ring lasers lase mainly in high-order whispering gallery modes, with smaller outer radius ring lasers operating in low-order whispering gallery modes.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; ring lasers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 11 to 251 micron; 6 micron; 950 to 1015 micron; IR; In/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As-GaAs; MOCVD; SiCl/sub 4/; emission spectra; etched; high-order whispering gallery modes; laser threshold current density; low-order whispering gallery modes; metalorganic chemical vapor deposition; optical characterization; outer radius; peak emission wavelength; planarized; polyimide; quantum-well heterostructure circular ring lasers; reactive ion etching; semiconductor laser diode growth; single Y-junction; strained-layer; Chemical lasers; Etching; Laser modes; Optical coupling; Optical waveguides; Quantum well lasers; Quantum wells; Ring lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
