DocumentCode :
1144521
Title :
Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6 µ
Author :
Vérié, Christian ; Sirieix, Michel
Author_Institution :
Centre National de la Recherche Scientifique, Bellevue, France
Volume :
8
Issue :
2
fYear :
1972
fDate :
2/1/1972 12:00:00 AM
Firstpage :
180
Lastpage :
184
Abstract :
Using departure from stoichiometry, p-n junctions were prepared in Cdx Hg1-x Te with 
for the study of photovoltaic detection at 10.6 μ. In the final photodiodes, with sensitive areas between 
and 10-3cm2, values such as 
and 8 pF have been observed at -0.1 V reverse bias for the shunt resistance and capacitance at 77°K. The CO2 laser detection characteristics were investigated, leading to 1010< D*(10.6 μ, 1800 Hz, 1 Hz) 
cm W-1Hz1/2, a frequency response flat up to 1 GHz, a heterodyne noise equivalent power (NEP) = 
W/Hz with l-mW local oscillator power. Studies as a function of the temperature indicated that substantial sensitivity can be obtained up to 135°K.
for the study of photovoltaic detection at 10.6 μ. In the final photodiodes, with sensitive areas between and 10-3cm2, values such as and 8 pF have been observed at -0.1 V reverse bias for the shunt resistance and capacitance at 77°K. The CO cm W-1Hz1/2, a frequency response flat up to 1 GHz, a heterodyne noise equivalent power (NEP) = W/Hz with l-mW local oscillator power. Studies as a function of the temperature indicated that substantial sensitivity can be obtained up to 135°K.Keywords :
Capacitance; Cutoff frequency; Detectors; Mercury (metals); P-n junctions; Photodiodes; Photovoltaic systems; Power lasers; Solar power generation; Tellurium;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1972.1076934
Filename :
1076934
Link To Document :
