Title :
Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasers
Author :
Newman, David ; Ritchie, S. ; O´Hara, S.
Author_Institution :
British Post Office Research Dept. Martlesham Heath, Ipswich, Suffold, England
fDate :
3/1/1972 12:00:00 AM
Abstract :
Degradation rates of double-heterostructure GaAs lasers have been measured and found to vary superlinearly with the injected current density above threshold. The results are discussed in the context of the Gold-Weisberg phonon-kick and the extended Longini field-inhibited diffusion degradation mechanisms.
Keywords :
Charge carrier processes; Current density; Degradation; Gallium arsenide; P-n junctions; Radiative recombination; Stimulated emission; Testing; Threshold current; Threshold voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1972.1076960
