Ionization radiation induced degradation of MOSFET channel frequency response

Author

Sharma, Umesh ; White, Marvin H.

Author_Institution

Sherman Fairchild Lab., Lehigh Univ., Bethlehem, PA, USA

Volume

36

Issue

3

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1359

Lastpage

1366

Abstract

A model is presented for the frequency response degradation of metal-oxide-semiconductor field-effect transistors (MOSFETs) exposed to ionizing radiation. It is shown that response degradation can be predicted by monitoring a single parameter, the gate-to-channel time-constant τ_GC, which is highly sensitive to the density of interface traps at the silicon-insulator interface. The value of τ_GC and its degradation with radiation dose are directly obtained by measuring the small signal impedance of a MOSFET. The measurement technique used enables the extraction of effective mobility of the inversion layer. Frequency response characteristics of two types of MOSFETs, fabricated using two different gate-insulator technologies and exposed to a total dose of 1 Mrad (Si), are compared

Keywords

insulated gate field effect transistors; radiation hardening (electronics); semiconductor device models; MOSFETs; Si-SiO₂; effective mobility; frequency response degradation; gate-insulator technologies; gate-to-channel time-constant; interface traps; inversion layer; ionizing radiation; metal-oxide-semiconductor field-effect transistors; radiation dose; small signal impedance; Charge pumps; Condition monitoring; Degradation; Density measurement; FETs; Frequency measurement; Frequency response; Ionization; Ionizing radiation; MOSFET circuits;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.31097

Filename

31097