Title :
Ionization radiation induced degradation of MOSFET channel frequency response
Author :
Sharma, Umesh ; White, Marvin H.
Author_Institution :
Sherman Fairchild Lab., Lehigh Univ., Bethlehem, PA, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
A model is presented for the frequency response degradation of metal-oxide-semiconductor field-effect transistors (MOSFETs) exposed to ionizing radiation. It is shown that response degradation can be predicted by monitoring a single parameter, the gate-to-channel time-constant τGC, which is highly sensitive to the density of interface traps at the silicon-insulator interface. The value of τGC and its degradation with radiation dose are directly obtained by measuring the small signal impedance of a MOSFET. The measurement technique used enables the extraction of effective mobility of the inversion layer. Frequency response characteristics of two types of MOSFETs, fabricated using two different gate-insulator technologies and exposed to a total dose of 1 Mrad (Si), are compared
Keywords :
insulated gate field effect transistors; radiation hardening (electronics); semiconductor device models; MOSFETs; Si-SiO2; effective mobility; frequency response degradation; gate-insulator technologies; gate-to-channel time-constant; interface traps; inversion layer; ionizing radiation; metal-oxide-semiconductor field-effect transistors; radiation dose; small signal impedance; Charge pumps; Condition monitoring; Degradation; Density measurement; FETs; Frequency measurement; Frequency response; Ionization; Ionizing radiation; MOSFET circuits;
Journal_Title :
Nuclear Science, IEEE Transactions on
