Title :
Ultralow Power Circuit Design With Subthreshold/Near-Threshold 3-D IC Technologies
Author :
Samal, Sandeep Kumar ; Yarui Peng ; Pathak, Mohit ; Sung Kyu Lim
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The requirement of ultralow power and energy efficient systems is becoming more and more important with the increase in the use of miniaturized portable devices and unsupervised remote sensor systems. 3-D integration is an emerging technology that helps in reducing footprint as well as power. In this paper, we study in detail the combined benefits of 3-D ICs and low-voltage supply designs to obtain maximum energy efficiency. We implement different types of circuits in conventional 2-D and through-silicon-via-based 3-D designs at different supply voltages varying from nominal to subthreshold voltages. The impact of 3-D integration on these different types of circuits is analyzed. Our study is based on power and energy comparison of full GDSII layouts. Our study confirms that subthreshold/near-threshold circuits indeed offer a few orders of magnitude power versus performance tradeoff with further improvement due to 3-D implementation. In addition, 3-D designs reduce the footprint area up to 78% and wirelength up to 33% compared with the 2-D counterpart for individual design benchmarks. Our studies also show that thermal and IR drop issues are negligible in subthreshold 3-D implementation due to its extreme low-power operation. Finally, we demonstrate the low-power and high-memory bandwidth advantages of many-core 3-D subthreshold circuits.
Keywords :
integrated circuit layout; low-power electronics; three-dimensional integrated circuits; 2D integrated circuit design; full GDSII layout; low voltage supply designs; maximum energy efficiency; near-threshold 3D IC technology; power versus performance trade-off; subthreshold 3D IC technology; thermal effect; through silicon via based 3D design; ultralow power circuit design; voltage drop issues; Integrated circuits; Inverters; Logic gates; Random access memory; Standards; Threshold voltage; Transistors; 3-D IC; subthreshold/near-threshold operation; through-silicon via (TSV); ultralow power; ultralow power.;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2015.2441066