• DocumentCode
    1144924
  • Title

    Wavelength-tunable asymmetric cladding ridge-waveguide distributed Bragg reflector lasers with very narrow linewidth

  • Author

    Smith, G.M. ; Hughes, J.S. ; Lammert, R.M. ; Osowski, M.L. ; Papen, G.C. ; Verdeyen, J.T. ; Coleman, J.J.

  • Author_Institution
    Microelectron. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    32
  • Issue
    7
  • fYear
    1996
  • fDate
    7/1/1996 12:00:00 AM
  • Firstpage
    1225
  • Lastpage
    1229
  • Abstract
    Narrow-linewidth ridge-waveguide distributed Bragg reflector (DBR) lasers with asymmetric cladding are demonstrated. This design requires only a single epitaxial growth of an asymmetric cladding laser structure while the grating and the ridge waveguide are fabricated after the growth. These lasers have a threshold current as low as 9 mA, a slope efficiency of 0.3 W/A, and a T/sub 0/ of 100 K. Wavelength tuning of 8 nm is achieved by current injection heating of the DBR section. A spectral-linewidth minimum of 36 kHz is achieved at an output power of 20 mW and is limited by linewidth rebroadening due to current injection in both the gain section and DBR section.
  • Keywords
    claddings; distributed Bragg reflector lasers; laser tuning; optical fabrication; semiconductor growth; semiconductor lasers; spectral line breadth; vapour phase epitaxial growth; waveguide lasers; 100 K; 20 mW; 9 mA; DBR lasers; DBR section; asymmetric cladding; asymmetric cladding laser structure; current injection; current injection heating; design requires; gain section; linewidth rebroadening; output power; ridge waveguide; ridge-waveguide distributed Bragg reflector lasers; single epitaxial growth; slope efficiency; spectral-linewidth minimum; threshold current; wavelength tuning; wavelength-tunable asymmetric cladding; Distributed Bragg reflectors; Distributed feedback devices; Epitaxial growth; Etching; Gratings; Laser feedback; Laser tuning; Optical device fabrication; Semiconductor lasers; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.517022
  • Filename
    517022