Title :
Wavelength-tunable asymmetric cladding ridge-waveguide distributed Bragg reflector lasers with very narrow linewidth
Author :
Smith, G.M. ; Hughes, J.S. ; Lammert, R.M. ; Osowski, M.L. ; Papen, G.C. ; Verdeyen, J.T. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
Narrow-linewidth ridge-waveguide distributed Bragg reflector (DBR) lasers with asymmetric cladding are demonstrated. This design requires only a single epitaxial growth of an asymmetric cladding laser structure while the grating and the ridge waveguide are fabricated after the growth. These lasers have a threshold current as low as 9 mA, a slope efficiency of 0.3 W/A, and a T/sub 0/ of 100 K. Wavelength tuning of 8 nm is achieved by current injection heating of the DBR section. A spectral-linewidth minimum of 36 kHz is achieved at an output power of 20 mW and is limited by linewidth rebroadening due to current injection in both the gain section and DBR section.
Keywords :
claddings; distributed Bragg reflector lasers; laser tuning; optical fabrication; semiconductor growth; semiconductor lasers; spectral line breadth; vapour phase epitaxial growth; waveguide lasers; 100 K; 20 mW; 9 mA; DBR lasers; DBR section; asymmetric cladding; asymmetric cladding laser structure; current injection; current injection heating; design requires; gain section; linewidth rebroadening; output power; ridge waveguide; ridge-waveguide distributed Bragg reflector lasers; single epitaxial growth; slope efficiency; spectral-linewidth minimum; threshold current; wavelength tuning; wavelength-tunable asymmetric cladding; Distributed Bragg reflectors; Distributed feedback devices; Epitaxial growth; Etching; Gratings; Laser feedback; Laser tuning; Optical device fabrication; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
