A Ta/Mo Interdiffusion Dual Metal Gate Technology for Drivability Enhancement of FinFETs

Author

Matsukawa, Takashi ; Endo, Kazuhiko ; Liu, Yongxun ; O´uchi, Shinichi ; Ishikawa, Yuki ; Yamauchi, Hiromi ; Tsukada, Junichi ; Ishii, Kenichi ; Masahara, Meishoku ; Sakamoto, Kunihiro ; Suzuki, Eiichi

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

Volume

29

Issue

6

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

618

Lastpage

620

Abstract

A Ta/Mo interdiffusion dual metal gate technology was successfully introduced to FinFET fabrication. The advantage of the proposed technology was examined by using the gate-first process without a metal-etch off step. The Ta/Mo gated nMOS FinFET with a reduced threshold voltage and the Mo gated pMOS FinFET exhibited symmetrical v alues of (0.31/0.36 V), which are desirable for the FinFET CMOS circuit operation with enhanced current drivability. It was also confirmed that the Ta/Mo interdiffusion process causes no degradation in the carrier mobility.

Keywords

CMOS integrated circuits; MOSFET; chemical interdiffusion; molybdenum alloys; tantalum alloys; FinFET CMOS circuit operation; FinFET fabrication; TaMo; gate-first process; interdiffusion dual metal gate technology; metal-etch off step; nMOS FinFET; threshold voltage; CMOSFET; FinFET; Molybdenum (Mo); Tantalum (Ta); dual metal gate; interdiffusion; work function (WF);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.922965

Filename

4498258