Title :
Coulomb interaction in semiconductor lasers
Author_Institution :
Bell Telephone Laboratories, Inc., Holmdel, NJ, USA
fDate :
6/1/1972 12:00:00 AM
Keywords :
Diode lasers; Excitons; Frequency; Gallium arsenide; Heterojunctions; Laboratories; Plasma density; Plasma temperature; Semiconductor lasers; Structural engineering;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1972.1077008
