• DocumentCode
    1145309
  • Title

    A 25-GHz emitter degenerated LC VCO

  • Author

    Zhan, Jing-Hong Conan ; Duster, Jon S. ; Kornegay, Kevin T.

  • Author_Institution
    Cornell Univ., Ithaca, NY, USA
  • Volume
    39
  • Issue
    11
  • fYear
    2004
  • Firstpage
    2062
  • Lastpage
    2064
  • Abstract
    A 25-GHz emitter degenerated bipolar LC voltage-controlled oscillator (VCO) designed in IBM´s SiGe 6 HP BiCMOS process (fT∼47 GHz) is presented. Including output buffers, the VCO occupies an area of 435 μm×225 μm and consumes 22 mW at a 1.9-V power supply. The phase noise at 1 MHz offset is -93 dBc/Hz and it achieves a high fOSC/fT ratio with a figure of merit of 174 dB.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; voltage-controlled oscillators; 1.9 V; 22 mW; 25 GHz; BiCMOS process; SiGe; bipolar LC voltage-controlled oscillator; emitter degenerated LC VCO; oscillation frequency; output buffers; phase noise; tuning range; BiCMOS integrated circuits; Circuit topology; Equations; Frequency; Germanium silicon alloys; Impedance; Phase noise; Silicon germanium; Tail; Voltage-controlled oscillators; VCO; Voltage-controlled oscillator; emitter degeneration; oscillation frequency; phase noise; tuning range;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2004.835839
  • Filename
    1347339
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1145309