DocumentCode
1145317
Title
2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency
Author
Jong-Lam Lee ; Haecheon Kim ; Jae Kyoung Mun ; Hae-Gwon Lee ; Hyung-Moo Park
Author_Institution
Compound Semicond. Dept., Electron. & Telecommunic. Res. Inst., Taejon, South Korea
Volume
15
Issue
9
fYear
1994
Firstpage
324
Lastpage
326
Abstract
A state-of-the-art GaAs power MESFET operating at a drain bias of 2.9 V has been developed using the high-low doped channel structure grown by molecular beam epitaxy. The device has 0.6 μm gate length and 16 mm gate width. The power performance tested at a 2.9 V drain bias and 900 MHz operation frequency was output power of 31.5 dBm with 11.5 dB gain and 64% power-added efficiency.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; molecular beam epitaxial growth; power transistors; 0.6 micron; 11.5 dB; 16 mm; 2.9 V; 64 percent; 900 MHz; GaAs; MBE; UHF operation; drain bias; high-low doped channel structure; molecular beam epitaxy; power MESFET; Buffer layers; Fabrication; Gain; Gallium arsenide; Low voltage; MESFETs; Power generation; Substrates; Superlattices; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.311122
Filename
311122
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