An improved inverted /spl delta/-doped GaAs/InGaAs pseudomorphic heterostructure grown by MOCVD

Author

Chang-Luen Wu ; Wei-Chou Hsu ; Hir-Ming Shieh ; Ming-Shang Tsai

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

15

Issue

9

fYear

1994

Firstpage

330

Lastpage

332

Abstract

This letter demonstrates a novel GaAs/In/sub 0.25/Ga/sub 0.75/As/GaAs pseudomorphic heterostructure with /spl delta/-doping on the buffer prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The proposed device with a 1.5×80 μm² gate reveals an extrinsic transconductance as high as 250 (305) mS/mm and a saturation current density as high as 790 (890) mA/mm at 300 (77) K. Significantly improvements on forward gate voltage swing (up to 3 V) and on reverse leakage current (smaller than 10 μA/mm at -6.5 V) are demonstrated due to inverted parallel conduction (IPC) effect. We also carried out secondary-ion mass spectrometry (SIMS) profiles to confirm the quality of the proposed device.

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; high electron mobility transistors; indium compounds; secondary ion mass spectra; semiconductor doping; semiconductor growth; semiconductor junctions; 300 K; 77 K; GaAs-In/sub 0.25/Ga/sub 0.75/As-GaAs; MODFET; extrinsic transconductance; forward gate voltage swing; inverted /spl delta/-doped GaAs/InGaAs pseudomorphic heterostructure; inverted parallel conduction; low-pressure metalorganic chemical vapor deposition; reverse leakage current; saturation current density; secondary-ion mass spectrometry; Chemical vapor deposition; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MOCVD; MODFETs; Photonic band gap; Transconductance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.311124

Filename

311124