Impact ionization modeling using simulation of high energy tail distributions

Author

Ahn, Jae-Gyung ; Yao, Chiang-Sheng ; Park, Young-June ; Min, Hong-Shick ; Dutton, Robert W.

Author_Institution

Dept. of Electron. Eng., Seoul Nat. Univ., South Korea

Volume

15

Issue

9

fYear

1994

Firstpage

348

Lastpage

350

Abstract

A new model for the impact ionization using the tail electron density is proposed. A new hydrodynamic model is used to compute the tail carrier quantities. The discretization method and numerical procedures are explained. The model parameters are extracted from the space-dependent Monte Carlo simulations. The simulated results for an n/sup +/-n/sup -/-n/sup +/ diode and a DILDD n-MOSFET are shown and give good agreement with Monte Carlo simulations and measurements, respectively.<>

Keywords

Monte Carlo methods; digital simulation; discrete event simulation; electron density; hydrodynamics; impact ionisation; insulated gate field effect transistors; semiconductor device models; DILDD n-MOSFET; discretization method; high energy tail distributions; hydrodynamic model; impact ionization; impact ionization modeling; n/sup +/-n/sup -/-n/sup +/ diode; numerical procedures; simulation; space-dependent Monte Carlo simulations; tail carrier quantities; tail electron density; Computational modeling; Electrons; Equations; High definition video; Hydrodynamics; Impact ionization; MOSFET circuits; Probability distribution; Scattering; Tail;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.311130

Filename

311130