Title :
High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques
Author :
Lin, W.Y. ; Wuu, D.S. ; Pan, K.F. ; Huang, S.H. ; Lee, C.E. ; Wang, W.K. ; Hsu, S.C. ; Su, Y.Y. ; Huang, S.Y. ; Horng, R.H.
Author_Institution :
Dept. of Mater. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
A large-area (1 × 1 mm) vertical conductive GaN-mirror-Cu light-emitting diode (LED) fabricated using the laser liftoff and electroplating techniques is demonstrated. Selective p-GaN top area was first electroplated by the thick copper film, and then an excimer laser was employed to separate the GaN thin film from the sapphire substrate. The luminance intensity of the vertical conductive p-side-down GaN-mirror-Cu LED presented about 2.7 times in magnitude as compared with that of the original GaN-sapphire LED (at 20 mA). The light output power for the GaN-mirror-Cu LED was about twofold stronger (at 500 mA). A more stable peak wavelength shift under high current injection was also observed.
Keywords :
copper; electroplating; gallium compounds; laser materials processing; light emitting diodes; metallic thin films; mirrors; semiconductor thin films; 1 mm; 20 mA; 500 mA; Al2O3; GaN thin film; copper film; current injection; electroplating; excimer laser; laser liftoff; light-emitting diodes; luminance; sapphire substrate; vertical current injection; wavelength shift; Conductive films; Copper; Gallium nitride; Heat sinks; Light emitting diodes; Liquid crystal displays; Power generation; Substrates; Thermal conductivity; Thermal resistance; Electroplating; GaN; laser liftoff (LLO); light-emitting diode (LED);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.852321
