A poly-silicon TFT with a sub-5-nm thick channel for low-power gain cell memory in mobile applications

Author

Ishii, Tomoyuki ; Osabe, Taro ; Mine, Toshiyuki ; Sano, Toshiaki ; Atwood, Bryan ; Yano, Kazuo

Author_Institution

Hitachi Central Res. Lab., Tokyo, Japan

Volume

51

Issue

11

fYear

2004

Firstpage

1805

Lastpage

1810

Abstract

This work presents a gain-cell solution in which a novel ultrathin polysilicon film transistor provides the basis for dense and low-power embedded random-access memory (RAM). This is made possible by the new transistor´s 2-nm-thick channel, which realizes a quantum-confinement effect that produces a low leakage current value of only 10^-19 A at room temperature. The memory has the potential to solve the power and stability problems that static RAM (SRAM) is going to face in the very near future.

Keywords

low-power electronics; quantum confined Stark effect; random-access storage; thin film transistors; 2 nm; 5 nm; MOSFET; dense radom-access memory; leakage current; low-power embedded random-access memory; low-power gain cell memory; mobile applications; poly-silicon TFT; power problems; quantum-confinement effect; semiconductor memories; stability problems; static RAM; thin film transistors; ultrathin polysilicon film transistor; Electric variables; Energy consumption; Leakage current; MOS capacitors; Random access memory; Read-write memory; Stability; Temperature; Thin film transistors; Voltage; MOSFETs; TFTs; semiconductor memories; thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.836546

Filename

1347398