Title :
GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer
Author :
Cheah, W.K. ; Fan, W.J. ; Yoon, S.F. ; Zhang, D.H. ; Ng, B.K. ; Loke, W.K. ; Liu, R. ; Wee, A.T.S.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
GaAs-based double-heterojunction p-i-n photodetectors using In/sub z/Ga/sub 1-z/As/sub 1-x-y/N/sub x/Sb/sub y/ in the i layer is fabricated for the first time using the solid source molecular beam epitaxy growth method. The surfactant effect generated by the presence of Sb in this material allows thick high-quality dilute nitride material growth. A peak responsivity of /spl sim/0.29 A/W, corresponding to quantum efficiencies of 38% is attained between 0.9 and 1.1 μm from the best p-i-n device. The cutoff wavelength reaches /spl sim/1.4 μm and the dark current is /spl sim/0.43 mA/cm2 at a reverse bias of 2 V. A Sb-free p-i-n device consisting of InGaAsN-GaAs is also fabricated to compare the device performance with the InGaAsNSb-GaAs p-i-n devices.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; semiconductor heterojunctions; surfactants; 0.9 to 1.1 mum; 1.4 mum; GaAs-based heterojunction; InGaAsNSb; dark current; dilute nitride material growth; intrinsic layer; p-i-n photodetectors; pentanary InGaAsNSb; solid source molecular beam epitaxy; surfactant effect; Absorption; Fabrication; Gallium arsenide; Heterojunctions; Lattices; Molecular beam epitaxial growth; PIN photodiodes; Photodetectors; Photonic band gap; Substrates; InGaAsNSb semiconductors; molecular beam epitaxy (MBE); p-i-n photodiodes; responsivity;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.851923
