Title :
High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application
Author :
Saito, Wataru ; Kuraguchi, Masahiko ; Takada, Yoshiharu ; Tsuda, Kunio ; Omura, Ichiro ; Ogura, Tsuneo
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
Abstract :
Undoped AlGaN-GaN power high electron mobility transistors (HEMTs) on sapphire substrate with 470-V breakdown voltage were fabricated and demonstrated as a main switching device for a high-voltage dc-dc converter. The fabricated power HEMT realized a high breakdown voltage with a field plate structure and a low on-state resistance of 3.9 mΩ·cm2, which is 10 × lower than that of conventional Si MOSFETs. The dc-dc converter operation of a down chopper circuit was demonstrated using the fabricated device at the input voltage of 300 V. These results show the promising possibilities of the AlGaN-GaN power HEMTs on sapphire substrate for future switching power devices.
Keywords :
DC-DC power convertors; III-V semiconductors; gallium compounds; power HEMT; sapphire; substrates; switching convertors; wide band gap semiconductors; 300 V; 470 V; AlGaN-GaN; down chopper circuit; field plate structure; high breakdown voltage; high-voltage dc-dc converter; high-voltage device; on-state resistance; power semiconductor device; sapphire substrate; switching device; undoped AlGaN-GaN power HEMT; Current density; Electrodes; HEMTs; Insulation; MODFETs; Power semiconductor switches; Silicon carbide; Substrates; Switching converters; Voltage; GaN; high-voltage device; power semiconductor device;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.836799
