Title :
Investigation of the four-gate action in G4-FETs
Author :
Dufrene, B. ; Akarvardar, K. ; Cristoloveanu, S. ; Blalock, B.J. ; Gentil, P. ; Kolawa, E. ; Mojarradi, M.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
Abstract :
The four-gate silicon-on-insulator transistor (G4-FET) combines MOS and JFET actions in a single transistor to control the drain current. The various operation modes of the G4-FET are analyzed, based on the measured current-voltage, transconductance and threshold characteristics. The main parameters (threshold voltage, swing, mobility) are extracted and shown to be optimized for particular combinations of gate biasing. Numerical simulations are used to clarify the role of volume or interface conduction mechanisms. Besides excellent performance (such as subthreshold swing and transconductance) and unchallenged flexibility, the new device has the unique feature to allow independent switching by its four separate gates, which inspires many innovative applications.
Keywords :
MOSFET; carrier mobility; junction gate field effect transistors; silicon-on-insulator; G4-FET; JFET action; MOSFET action; SOI; carrier mobility; current-voltage characteristics; drain current control; four-gate action; four-gate silicon-on-insulator transistor; gate biasing; independent gate switching; interface conduction mechanisms; multiple-gate transistor; subthreshold swing; threshold voltage; transconductance; volume conduction mechanisms; Current measurement; Laboratories; MOSFET circuits; Microelectronics; Performance analysis; Propulsion; Silicon on insulator technology; Threshold voltage; Transconductance; Voltage control; JFET; MOSFET; SOI; multiple-gate transistor; silicon-on-insulator;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.836548
