Transport equation approach for heterojunction bipolar transistors

Author

Tomizawa, Kazutaka ; Pavlidis, Dimitris

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

37

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

519

Lastpage

529

Abstract

Transport equations for particle, momentum, and energy densities in two conduction bands are applied to a self-consistent numerical simulation of heterojunction bipolar transistors. Simple formulas for the relaxation frequencies, by which the variation of the conduction band energy and doping concentration in a heterojunction device are easily taken into account, are proposed. The electron transport in the AlGaAs/GaAs heterojunction bipolar transistor with two different collector structures is analyzed and discussed

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; numerical methods; semiconductor device models; AlGaAs-GaAs transistor; HBT model; collector structures; conduction bands; doping concentration; electron transport; energy densities; heterojunction bipolar transistors; relaxation frequencies; self-consistent numerical simulation; semiconductor; Bipolar transistors; Doping; Electrons; Equations; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Monte Carlo methods; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.47753

Filename

47753