• DocumentCode
    1146333
  • Title

    High thermally induced index variations with short response time in InP/GalnAsP/InP waveguide Schottky diodes

  • Author

    Saadsaoud, N. ; Zegaoui, M. ; Decoster, D. ; Dogheche, E. ; Wallart, Xavier ; Chazelas, J.

  • Author_Institution
    Inst. d´Electron., de Microelectron. et de Nanotechnol., Univ. des Sci. et Technol. de Lille, Villeneuve d´Ascq, France
  • Volume
    45
  • Issue
    15
  • fYear
    2009
  • Firstpage
    802
  • Lastpage
    803
  • Abstract
    Thermally induced index variations as high as 0.1 were recorded in InP/GaAsInP1.15/InP waveguide Schottky diodes for 1 W/mm electrical power per electrode length. Pulse response characterisation showed almost 700 ns response time for 1 ??s square pulses under forward biased conditions (I = 20 mA, V = 300 mV).
  • Keywords
    Schottky diodes; arsenic compounds; gallium compounds; indium compounds; microwave devices; InP-GaInAsP-InP; pulse response characterisation; thermally-induced index variations; waveguide Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0696
  • Filename
    5173130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1146333