DocumentCode :
1146398
Title :
Electrostatic modeling and ESD damage of magnetoresistive sensors
Author :
Wallash, Albert J.
Author_Institution :
Storage Syst. Div., IBM Corp., San Jose, CA, USA
Volume :
32
Issue :
1
fYear :
1996
fDate :
1/1/1996 12:00:00 AM
Firstpage :
49
Lastpage :
53
Abstract :
The response of a thin-film sensor to the excessive current and/or voltage during an electrostatic discharge (ESD) event is studied. An unshielded magnetoresistive (MR)-like recording head structure is analyzed and modeled from the viewpoint of electrostatic theory. An electrical model for the MR head structure is proposed and used in circuit simulations to study the current flow through the thin-film resistor during a Human Body Model ESD transient. A thermal model for the thin-film resistor burnout is compared with experiment and 2D modeling of the fields and voltages are presented. Finally, Maxwell´s method is used to calculate the induced charge on the MR structure when a charged external conductor is present
Keywords :
electrostatic discharge; equivalent circuits; magnetic heads; magnetic sensors; magnetic thin film devices; magnetoresistive devices; modelling; thermal analysis; transients; 2D modeling; ESD damage; Maxwell´s method; charged external conductor; circuit simulations; current flow; electrical model; electrostatic discharge; electrostatic modeling; human body model ESD transient; induced charge calculation; magnetoresistive recording head; magnetoresistive sensors; thermal model; thin-film resistor burnout; thin-film sensor response; unshielded MR head structure; Biological system modeling; Electrostatic analysis; Electrostatic discharge; Magnetic heads; Magnetic sensors; Magnetoresistance; Resistors; Thin film circuits; Thin film sensors; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.477549
Filename :
477549
Link To Document :
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