Ultrafast, multi-THz-detuning, third-order frequency conversion in semiconductor quantum-well waveguides

Author

Le, H.Q. ; Di Cecca, S.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

4

Issue

8

fYear

1992

Firstpage

878

Lastpage

880

Abstract

The near-band-edge resonance nonlinearity of semiconductor quantum wells has been used to obtain nondegenerate four-wave mixing over a multi-THz frequency detuning range, with large conversion efficiencies. In 1-mm-long, passive AlGaAs/GaAs single-quantum-well waveguides, conversion efficiencies up to -8.5 dB with relatively flat response have been observed over a 7.5-THz range (2.2% of the band gap). The nonlinearity is ultrafast and primarily reactive. The potential application of this technique to wavelength shifting devices is discussed.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; multiwave mixing; optical frequency conversion; optical waveguides; 1 mm; AlGaAs-GaAs; SQW; conversion efficiencies; frequency detuning range; large conversion efficiencies; multi-THz-detuning; near-band-edge resonance nonlinearity; nondegenerate four-wave mixing; semiconductor quantum wells; semiconductor quantum-well waveguides; single-quantum-well waveguides; third-order frequency conversion; tuning; ultrafast nonlinearity; wavelength shifting devices; Dynamic range; Four-wave mixing; Frequency conversion; Gallium arsenide; Optical waveguides; Probes; Pulse measurements; Quantum wells; Resonance; Semiconductor waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.149894

Filename

149894