DocumentCode
1146723
Title
A New FET-Bipolar Combinational Power Semiconductor Switch
Author
Chen, D.Y. ; Chandrasekaran, S. ; Chin, S.A.
Author_Institution
Virginia Polytechnic Institute and State University
Issue
2
fYear
1984
fDate
3/1/1984 12:00:00 AM
Firstpage
104
Lastpage
111
Abstract
A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.
Keywords
Bipolar transistors; Circuits; Clamps; Costs; Diodes; Electric breakdown; FETs; Low voltage; Power semiconductor switches; Power transistors;
fLanguage
English
Journal_Title
Aerospace and Electronic Systems, IEEE Transactions on
Publisher
ieee
ISSN
0018-9251
Type
jour
DOI
10.1109/TAES.1984.310432
Filename
4103912
Link To Document