Title :
A New FET-Bipolar Combinational Power Semiconductor Switch
Author :
Chen, D.Y. ; Chandrasekaran, S. ; Chin, S.A.
Author_Institution :
Virginia Polytechnic Institute and State University
fDate :
3/1/1984 12:00:00 AM
Abstract :
A novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.
Keywords :
Bipolar transistors; Circuits; Clamps; Costs; Diodes; Electric breakdown; FETs; Low voltage; Power semiconductor switches; Power transistors;
Journal_Title :
Aerospace and Electronic Systems, IEEE Transactions on
DOI :
10.1109/TAES.1984.310432
